Electrical properties of ZnO:Al thin films fabricated by pulsed laser deposition method

Authors

  • A.V. Shorokhova Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya St., Shatura, Moscow region, 140700, Russia av.shor@yandex.ru
  • D.A. Zuev Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya St., Shatura, Moscow region, 140700, Russia av.shor@yandex.ru
  • A.A. Lotin Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya St., Shatura, Moscow region, 140700, Russia av.shor@yandex.ru
  • O.A. Novodvorsky Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya St., Shatura, Moscow region, 140700, Russia av.shor@yandex.ru
  • O.D. Khramova Institute on Laser and Information Technologies of the Russian Academy of Sciences, 1 Svyatoozerskaya St., Shatura, Moscow region, 140700, Russia av.shor@yandex.ru

DOI:

https://doi.org/10.12684/alt.1.52

Abstract

The possibility of the high quality AZO thin films fabrication by the PLD method using the second harmonic of the Q-switched YAG:Nd3+ laser is demonstrated. The investigations of dependence of the AZO thin films properties on the PLD conditions (concentration of Al in the target, buffer gas pressure) have been conducted. The optimum conditions of the ZnO:Al thin films deposition have been defined.
ALT 12 Conference, Gwatt, Sept. 2 -6, Switzerland

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Published

2012-11-01

How to Cite

Shorokhova, A., Zuev, D., Lotin, A., Novodvorsky, O., & Khramova, O. (2012). Electrical properties of ZnO:Al thin films fabricated by pulsed laser deposition method. ALT Proceedings, 1. https://doi.org/10.12684/alt.1.52

Issue

Vol. 1 (2012)

Section

Laser – matter interaction and processing technologies

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