Electrical properties of ZnO:Al thin films fabricated by pulsed laser deposition method
AbstractThe possibility of the high quality AZO thin films fabrication by the PLD method using the second harmonic of the Q-switched YAG:Nd3+ laser is demonstrated. The investigations of dependence of the AZO thin films properties on the PLD conditions (concentration of Al in the target, buffer gas pressure) have been conducted. The optimum conditions of the ZnO:Al thin films deposition have been defined.
How to Cite
Shorokhova, A., Zuev, D., Lotin, A., Novodvorsky, O., & Khramova, O. (2012). Electrical properties of ZnO:Al thin films fabricated by pulsed laser deposition method. ALT Proceedings, 1. https://doi.org/10.12684/alt.1.52
Laser – matter interaction and processing technologies
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