Modeling of non-equilibrium effects in silicon irradiated by pulsed laser

Authors

  • A. Mazhukin Keldysh Institute of Applied Mathematics of RAS, Moscow, Miusskaya sq.4, Russia

DOI:

https://doi.org/10.12684/alt.1.56

Abstract

In this paper, we use the methods of mathematical modeling to investigate the action of laser pulse (picosecond) with a wave length of λL=0.53μm and the photon energy exceeding the band gap of silicon ħω>Eg on silicon target. The main feature of these regimes of laser irradiation is strong non-equilibrium of heating and melting processes, which is manifested in a large temperature difference between the carriers and the lattice.
ALT 12 Conference, Gwatt, Sept. 2 -6, Switzerland

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Published

2012-11-01

How to Cite

Mazhukin, A. (2012). Modeling of non-equilibrium effects in silicon irradiated by pulsed laser. ALT Proceedings, 1. https://doi.org/10.12684/alt.1.56

Issue

Vol. 1 (2012)

Section

Laser – matter interaction and processing technologies

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